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Fall Time: 2.9 ns, 2.9 ns
Rise Time: 4.3 ns, 4.3 ns
Technology: Si
Unit Weight: 1.170 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 407 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.7 ns, 4.7 ns
Typical Turn-Off Delay Time: 6.9 ns, 6.9 ns
Id - Continuous Drain Current: 260 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 5.7 Ohms, 5.7 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
