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Nexperia PBHV9050T,215 BJTs - Bipolar Transistors 500 V, 150 mA PNP high-voltage low VCEsat transistor

Name: Nexperia PBHV9050T,215 BJTs - Bipolar Transistors 500 V, 150 mA PNP high-voltage low VCEsat transistor
Brand: Nexperia

ModelPBHV9050T,215

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Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 1 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: - 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 500 V

Collector-Emitter Saturation Voltage: 115 mV