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Technology: Si
Unit Weight: 103.355 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 650 mW
Gain Bandwidth Product fT: 38 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 600 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 70 at - 50 mA, - 10 V
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 900 mV
