Nexperia PBSS4160XF BJTs - Bipolar Transistors 60 V, 1 A NPN low VCEsat BISS transistor

Technology: Si

Unit Weight: 40.375 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.35 W

DC Current Gain hFE Max: 360

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 170

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV