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Width: 1.7 mm
Height: 1 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 1 g
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 300 at 1 mA, 5 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 1.35 A, - 1.1 A
Maximum DC Collector Current: 1.35 A, 1.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 300 mV, 400 mV
