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Technology: Si
Unit Weight: 3.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 700 at 1 A, 2 V
Gain Bandwidth Product fT: 210 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 270 at 1 A, 2 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 220 mV
