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Width: 3.7 mm
Height: 1.7 mm
Length: 6.7 mm
Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2 W
Gain Bandwidth Product fT: 130 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 210 mV
