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Nexperia PBSS5160T-QVL BJTs - Bipolar Transistors 60 V, 1 A PNP low VCEsat transistor

Name: Nexperia PBSS5160T-QVL BJTs - Bipolar Transistors 60 V, 1 A PNP low VCEsat transistor
Brand: Nexperia

ModelPBSS5160T-QVL

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Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.25 W

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 110 mV