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Fall Time: 51 ns, 6 ns
Rise Time: 9.2 ns, 5 ns
Technology: Si
Unit Weight: 1.200 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 700 pC, 2.1 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 380 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 5.6 ns, 2.3 ns
Typical Turn-Off Delay Time: 19 ns, 13.5 ns
Id - Continuous Drain Current: 600 mA, 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1 S, 480 mS
Rds On - Drain-Source Resistance: 470 mOhms, 1.02 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 450 mV, 950 mV
