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Fall Time: 20 ns
Rise Time: 8 ns
Technology: Si
Unit Weight: 250 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 15.9 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 8.3 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6 ns
Typical Turn-Off Delay Time: 42 ns
Id - Continuous Drain Current: 2.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 13.5 S
Rds On - Drain-Source Resistance: 167 mOhms
Vds - Drain-Source Breakdown Voltage: 70 V
Vgs th - Gate-Source Threshold Voltage: 3 V
