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Nexperia PQMD10Z BJTs - Bipolar Transistors NPN/PNP resistor-equipped transistors; R1 = 47 kohm, R2 = 47 kohm

Name: Nexperia PQMD10Z BJTs - Bipolar Transistors NPN/PNP resistor-equipped transistors; R1 = 47 kohm, R2 = 47 kohm
Brand: Nexperia

ModelPQMD10Z

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Technology: Si

Unit Weight: 1.237 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 350 mW

Gain Bandwidth Product fT: 230 MHz, 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV