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Fall Time: 14 ns
Rise Time: 36 ns
Technology: Si
Unit Weight: 1.169 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 10.1 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.7 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 9 ns
Id - Continuous Drain Current: 1.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.9 S
Rds On - Drain-Source Resistance: 400 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 4 V
