Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 21 dB
Technology: Si
Unit Weight: 13.164 g
Output Power: 140 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 470 MHz to 860 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.25 kW
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 19.4 S
Vds - Drain-Source Breakdown Voltage: 115 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
