NXP MRFX1K80GNR5 RF Power MOSFET Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
Manufacturer: NXP Model: MRFX1K80GNR5 - Contact
Gain: 24.4 dB
Technology: Si
Unit Weight: 5.281 g
Output Power: 1.8 kW
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 400 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3.333 kW
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 43 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 44.7 S
Vds - Drain-Source Breakdown Voltage: 179 V
Vgs th - Gate-Source Threshold Voltage: 2.9 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment