NXP MW6S010NR1 RF Power MOSFET HV6 900MHZ 10W TO270-2N
Manufacturer: NXP Model: MW6S010NR1 - Contact
Gain: 18 dB
Technology: Si
Unit Weight: 1.700 g
Channel Mode: Enhancement
Output Power: 10 W
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Moisture Sensitive: Yes
Operating Frequency: 450 MHz to 1.5 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 125 mA
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 68 V
Vgs th - Gate-Source Threshold Voltage: 3 V
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