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Gain: 21.1 dB
Technology: Si
Unit Weight: 532.200 mg
Output Power: 2.5 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 400 MHz to 2.7 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
