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Gain: 16.6 dB
Technology: Si
Unit Weight: 0.001 mg
Output Power: 63 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.805 GHz to 1.88 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 104 W
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 2.4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
