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Gain: 16.9 dB
Technology: Si
Channel Mode: Enhancement
Output Power: 112 W
Configuration: Triple
Transistor Type: 3 N-Channel
Moisture Sensitive: Yes
Number of Channels: 3 Channel
Operating Frequency: 616 MHz to 870 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 6 VDC, 10 VDC
Maximum Operating Temperature: + 225 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 105 V
Vgs th - Gate-Source Threshold Voltage: 2.5 VDC
