NXP A5G35H055NT4 RF Power MOSFET Airfast RF Power GaN Amplifier, 3400-3600 MHz, 7.6 W Avg., 48 V
Manufacturer: NXP Model: A5G35H055NT4 - Contact
Technology: GaN-on-Si
Output Power: 7.6
Mounting Style: SMD/SMT
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Vgs - Gate-Source Voltage: - 16 V
Maximum Operating Frequency: 3.6 GHz
Minimum Operating Frequency: 3.4 GHz
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
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