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Home GaN FETs NXP A5G38H045NT4 RF Power MOSFET Airfast RF Power GaN Amplifier, 3400-4000 MHz, 5.4 W Avg., 48 V

NXP A5G38H045NT4 RF Power MOSFET Airfast RF Power GaN Amplifier, 3400-4000 MHz, 5.4 W Avg., 48 V

Technology: GaN-on-Si

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Vgs - Gate-Source Voltage: - 16 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 2.4 V

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  • Easy change and return
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