NXP AFT09MP055NR1 RF Power MOSFET MV9 55W 12.5V TO270WB4
Manufacturer: NXP Model: AFT09MP055NR1 - Contact
Gain: 17.5 dB
Technology: Si
Unit Weight: 1.635 g
Output Power: 57 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Operating Frequency: 764 MHz to 940 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 625 W
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 7.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 7 S
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
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