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Gain: 20.9 dB
Technology: Si
Unit Weight: 280 mg
Output Power: 1.26 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 728 MH to 2700 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 154 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
