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Gain: 21.3 dB
Technology: Si
Output Power: 1.05 kW
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 850 MHz to 950 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 105 V
Vgs th - Gate-Source Threshold Voltage: 1.7 V
