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Gain: 18.8 dB
Technology: Si
Unit Weight: 13.193 g
Output Power: 1.1 kW
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.03 GHz to 1.1 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 869 W
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 2.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 105 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
