onsemi 2SC6144SG BJTs - Bipolar Transistors BIP NPN 10A 50V
Manufactureronsemi(View more products from this manufacturer)
Model2SC6144SG
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 25 W
Gain Bandwidth Product fT: 330 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 10 A
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 180 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts