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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 416 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 25 A
Collector-Emitter Saturation Voltage: 1.37 V
Continuous Collector Current at 25 C: 50 A
