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Fall Time: 17.7 us
Rise Time: 570 ns
Technology: Si
Unit Weight: 60 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 100 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 80 ns
Typical Turn-Off Delay Time: 38 us
Id - Continuous Drain Current: 27 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 6.3 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
