Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 4 V
Vgs (Max): 30V
Gate Charge (Qg): 19nC
Power consumption: 2.5|49W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 600V
Continuous drain current: 2.8A
Input Capacitance (Ciss): 670pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 2.5Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
