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Vgs(th): 4 V
Vgs (Max): 25V
Gate Charge (Qg): 8.2nC
Power consumption: 2.5|28W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 60V
Continuous drain current: 5.4A
Input Capacitance (Ciss): 295pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 451mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
