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Width: 4 mm
Height: 1.5 mm
Length: 5 mm
Technology: Si
Unit Weight: 143 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 783 mW
DC Current Gain hFE Max: 200 at 10 mA, 2 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V, 7 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 82 mV, 135 mV
