Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 40 mg
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Gate-Source Cutoff Voltage: - 1.2 V
Maximum Drain Gate Voltage: 25 V
Drain-Source Current at Vgs=0: 40 mA
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 40 mS
Rds On - Drain-Source Resistance: 78 mOhms
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 25 V
