onsemi NTH4L015N065SC1 SiC MOSFETS Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L

Fall Time: 9.6 ns

Rise Time: 26 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 283 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 49 ns

Id - Continuous Drain Current: 142 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 47 S

Rds On - Drain-Source Resistance: 18 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V