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Vgs(th): 2.2 V
Vgs (Max): 20V
Gate Charge (Qg): 17.6nC
Power consumption: 910mW|19.8W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 7.4A/35A
Input Capacitance (Ciss): 1205pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 9mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
