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Fall Time: 13 ns
Rise Time: 16.2 ns
Technology: SiC
Configuration: Dual
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Pd - Power Dissipation: 413 W
Vgs - Gate-Source Voltage: - 15 V, + 25 V
Typical Turn-On Delay Time: 36 ns
Typical Turn-Off Delay Time: 135.2 V
Id - Continuous Drain Current: 114 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 14 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
