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Fall Time: 12.8 ns
Rise Time: 19.8 ns
Technology: SiC
Configuration: Dual Common Source
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Vf - Forward Voltage: 2.3 V
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 352 W
Vgs - Gate-Source Voltage: - 8 V, + 18 V
Typical Turn-On Delay Time: 43.2 ns
Typical Turn-Off Delay Time: 110 ns
Id - Continuous Drain Current: 149 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 14 mOhms
Vds - Drain-Source Breakdown Voltage: 900 V
Vgs th - Gate-Source Threshold Voltage: 4.3 V
