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onsemi NXH50C120L2C2ESG IGBT Silicon Modules TMPIM 1200V 50A CIB | EMIN.COM.MM

Discrete & Power Modules
onsemi NXH50C120L2C2ESG IGBT Silicon Modules TMPIM 1200V 50A CIB

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onsemi NXH50C120L2C2ESG IGBT Silicon Modules TMPIM 1200V 50A CIB

Manufactureronsemi(View more products from this manufacturer)

ModelNXH50C120L2C2ESG

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 50 A

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