PANJIT MMBT3906_R2_00001 BJTs - Bipolar Transistors PNP GENERAL PURPOSE SWITCHING TRANSISTOR

Technology: Si

Unit Weight: 8.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 330 mW

DC Current Gain hFE Max: 300 at - 10 mA, - 1 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100 at - 10 mA, - 1 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV