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PANJIT PJS6415AE_S1_00001 MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected | EMIN.COM.MM

MOSFETs
PANJIT PJS6415AE_S1_00001 MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected

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PANJIT PJS6415AE_S1_00001 MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected

ManufacturerPANJIT(View more products from this manufacturer)

ModelPJS6415AE_S1_00001

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Technology: Si

Unit Weight: 14.194 mg

Qg - Gate Charge: 6.9 nC

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 4.9 A

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

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