Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 23 ns
Rise Time: 20 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 1.4 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 2.8 ns
Typical Turn-Off Delay Time: 23 ns
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 400 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
