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Fall Time: 18 ns
Rise Time: 21 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 820 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 2.7 ns
Typical Turn-Off Delay Time: 3.8 ns
Id - Continuous Drain Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
