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Qorvo QPD1009 GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN | EMIN.COM.MM

GaN FETs
Qorvo QPD1009 GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

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Qorvo QPD1009 GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

ManufacturerQorvo(View more products from this manufacturer)

ModelQPD1009

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Gain: 24 dB

Technology: GaN

Unit Weight: 5.756 g

Output Power: 17 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: QPD1009-EVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 17.5 W

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 700 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 145 V

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: - 2.8 V

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