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Gain: 24.7 dB
Technology: GaN
Unit Weight: 2.300 g
Output Power: 11 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: QPD1010-EVB1
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13.5 W
Maximum Operating Frequency: 4 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 400 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: 145 V
Vds - Drain-Source Breakdown Voltage: 50 V
Vgs th - Gate-Source Threshold Voltage: - 2.8 V
