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Qorvo QPD1022TR7 RF Power MOSFET DC-12 GHz, 10W, 32V GaN RF Tr | EMIN.COM.MM

GaN FETs
Qorvo QPD1022TR7 RF Power MOSFET DC-12 GHz, 10W, 32V GaN RF Tr

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Qorvo QPD1022TR7 RF Power MOSFET DC-12 GHz, 10W, 32V GaN RF Tr

ManufacturerQorvo(View more products from this manufacturer)

ModelQPD1022TR7

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Technology: GaN-on-SiC

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 17.5 W

Id - Continuous Drain Current: 610 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 100 V

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