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Qorvo TGF2023-2-02 GaN SiC HEMT DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB | EMIN.COM.MM

GaN FETs
Qorvo TGF2023-2-02 GaN SiC HEMT DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB

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Qorvo TGF2023-2-02 GaN SiC HEMT DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB

ManufacturerQorvo(View more products from this manufacturer)

ModelTGF2023-2-02

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Gain: 21 dB

Technology: GaN-on-SiC

Unit Weight: 230.250 mg

Output Power: 12 W

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 18 GHz

Minimum Operating Frequency: 0 Hz

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