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Qorvo TGF2023-2-02 GaN SiC HEMT DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB

Gain: 21 dB

Technology: GaN-on-SiC

Unit Weight: 230.250 mg

Output Power: 12 W

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 18 GHz

Minimum Operating Frequency: 0 Hz

  • Quality Engagement
  • Easy change and return
  • Delivery Avaliable
  • Favorable payment

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