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Fall Time: 11 ns
Rise Time: 18 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 37.8 nC
Transistor Polarity: N-Channel
Pd - Power Dissipation: 181 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 119 ns
Id - Continuous Drain Current: 35.6 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 44 mOhms
Vds - Drain-Source Breakdown Voltage: 750 V
Vgs th - Gate-Source Threshold Voltage: 6 V
