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Width: 15.5 mm
Height: 5.5 mm
Length: 26.5 mm
Fall Time: 50 ns
Rise Time: 50 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 50 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 17 ns
Typical Turn-Off Delay Time: 150 ns
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 0.45 S
Rds On - Drain-Source Resistance: 12 Ohms
Vds - Drain-Source Breakdown Voltage: 1.5 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
