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Fall Time: 15 ns
Rise Time: 160 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 250 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 213 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 42 ns
Typical Turn-Off Delay Time: 140 ns
Id - Continuous Drain Current: 110 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 50 S
Rds On - Drain-Source Resistance: 2.8 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
