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EPC: M8.15
Size: 4.9X3.9X0.00mm
Type: SOICN
Pitch: 1.3mm
Width: 3.9mm
Length: 4.9mm
Fall Time: 10ns
Gate type: NChannelMOSFET
Rise Time: .010
Thickness: 0
Category 1: Half-Bridge FET Drivers
Category 2: Half-Bridge FET Drivers
Input type: Non-inverted
Channel Fit: Independence
Charge Pump: No
VBIAS (Max): 14
Constitution: Half Bridge
Voltage (UL): 4|7V
Mounting Type: Surface Mount
Rise/Fall Time: 10|10ns
Supply voltage: 9 to 14V
Bootstrap Voltage: 114V
Input Logic Level: CMOS
Number of drivers: 2
Turn-On Prop Delay: 20
Qualification Level: Standard
Turn-Off Prop Delay: 20
Peak Pull-up Current: 2
Operating temperature: --55 to 150C
Maximum output current: 2|2A
Peak Pull-down Current: 2
Operating temperature range: -40 to 85C
