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Width: 3.95 mm
Height: mm
Length: 4.9 mm
Fall Time: 6.3 us
Rise Time: 3.4 us
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 16 V, + 2.5 V
Typical Turn-On Delay Time: 0.9 us
Typical Turn-Off Delay Time: 3.2 us
Id - Continuous Drain Current: 1.5 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 1.5 S
Rds On - Drain-Source Resistance: 350 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
