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Width: mm
Height: mm
Length: mm
Technology: Si
Unit Weight: 80 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 29 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 55 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 7 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
